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FDS8984_F085 - N-Channel PowerTrench MOSFET

Key Features

  • This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
  • Max rDS(on) = 23mΩ, VGS = 10V, ID = 7A.
  • Max rDS(on) = 30mΩ, VGS = 4.5V, ID = 6A.
  • Low gate charge.
  • 100% RG tested.
  • Qualified to AEC Q101.
  • RoHS Compliant DD2DD2 DD1 DD1 SO-8 Pin 1 SO-8.

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Full PDF Text Transcription (Reference)

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FDS8984_F085 N-Channel PowerTrench® MOSFET FDS8984_F085 N-Channel PowerTrench® MOSFET 30V, 7A, 23mΩ Fabruary 2010 tm General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. „ Max rDS(on) = 23mΩ, VGS = 10V, ID = 7A „ Max rDS(on) = 30mΩ, VGS = 4.