FDS8984_F085 Datasheet | Fairchild Semiconductor

Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed. - Max r DS(on) = 23mΩ, VGS = 10V, ID = 7A - Max r DS(on) = 30mΩ, VGS = 4.5V, ID = 6A - Low gate charge - 100% RG tested - Qualified to AEC Q101 - Ro HS pliant DD2DD2 DD1 DD1 SO-8 Pin 1 SO-8 SS1GS1SS2GG2 5 6 Q2 7 8 Q1 4 3 2 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS Drain to Source Voltage Gate to Source Voltage Drain Current Continuous Pulsed Parameter (Note 1a) EAS Single Pulse Avalache Energy Power Dissipation for Single Operation Derate above 25°C (Note 2) TJ, TSTG Operating and Storage Temperature Ratings 30 ±20 7 30 32 1.6 13 -55 to 150 Units V V A A m J W m W/°C °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W Package Marking and Ordering Information Device Marking FDS8984 Device FDS8984_F085 Package...